Nano-CMOS and Post-CMOS Electronics : Devices and modelling Volume 1, Hardback Book

Description

The demand for ever smaller and portable electronic devices has driven metal oxide semiconductor-based (CMOS) technology to its physical limit with the smallest possible feature sizes.

This presents various size-related problems such as high power leakage, low-reliability, and thermal effects, and is a limit on further miniaturization.

To enable even smaller electronics, various nanodevices including carbon nanotube transistors, graphene transistors, tunnel transistors and memristors (collectively called post-CMOS devices) are emerging that could replace the traditional and ubiquitous silicon transistor.

This book explores these nanoelectronics at the device level including modelling and design. Topics covered include high-k dielectrics; high mobility n and p channels on gallium arsenide and silicon substrates using interfacial misfit dislocation arrays; anodic metal-insulator-metal (MIM) capacitors; graphene transistors; junction and doping free transistors; nanoscale gigh-k/metal-gate CMOS and FinFET based logic libraries; multiple-independent-gate nanowire transistors; carbon nanotubes for efficient power delivery; timing driven buffer insertion for carbon nanotube interconnects; memristor modeling; and neuromorphic devices and circuits. This book is essential reading for researchers, research-focused industry designers/developers, and advanced students working on next-generation electronic devices and circuits.

Information

  • Format: Hardback
  • Pages: 384 pages
  • Publisher: Institution of Engineering and Technology
  • Publication Date:
  • Category: Circuits & components
  • ISBN: 9781849199971

£95.00

£82.95

 
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