Please note: In order to keep Hive up to date and provide users with the best features, we are no longer able to fully support Internet Explorer. The site is still available to you, however some sections of the site may appear broken. We would encourage you to move to a more modern browser like Firefox, Edge or Chrome in order to experience the site fully.

Fowler-Nordheim Field Emission : Effects in Semiconductor Nanostructures, Paperback / softback Book

Fowler-Nordheim Field Emission : Effects in Semiconductor Nanostructures Paperback / softback

Part of the Springer Series in Solid-State Sciences series

Paperback / softback

Description

This monograph solely presents the Fowler-Nordheim field emission (FNFE) from semiconductors and their nanostructures.

The materials considered are quantum confined non-linear optical, III-V, II-VI, Ge, Te, carbon nanotubes, PtSb2, stressed materials, Bismuth, GaP, Gallium Antimonide, II-V, Bi2Te3, III-V, II-VI, IV-VI and HgTe/CdTe superlattices with graded interfaces and effective mass superlattices under magnetic quantization and quantum wires of the aforementioned superlattices.

The FNFE in opto-electronic materials and their quantum confined counterparts is studied in the presence of light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices.

The importance of band gap measurements in opto-electronic materials in the presence of external fields is discussed from this perspective.

This monograph contains 200 open research problems which form the very core and are useful for Ph.

D students and researchers. The book can also serve as a basis for a graduate course on field emission from solids.

Information

Other Formats

Save 18%

£99.99

£81.69

Item not Available
 
Free Home Delivery

on all orders

 
Pick up orders

from local bookshops

Information

Also in the Springer Series in Solid-State Sciences series  |  View all