Materials Reliability in Microelectronics V: Volume 391 Hardback
Edited by William F. Filter, Kamesh Gadepally, A. Lindsay (University of Cambridge) Greer, Anthony S. (AT&T Bell Laboratories, New Jersey) Oates, Robert (IBM T J Watson Research Center, New York) Rosenberg
Part of the MRS Proceedings series
Hardback
Description
This long-standing proceedings series is highly regarded as a premier forum for the discussion of microelectronics reliability issues. In this fifth book, emphasis is on the fundamental understanding of failure phenomena in thin-film materials. Special attention is given to electromigration and mechanical stress effects. The reliability of thin dielectrics and hot carrier degradation of transistors are also featured.
Topics include: modeling and simulation of failure mechanisms; reliability issues for submicron IC technologies and packaging; stresses in thin films/lines; gate oxides; barrier layers; electromigration mechanisms; reliability issues for Cu metallizations; electromigration and microstructure; electromigration and stress voiding in circuit interconnects; and resistance measurements of electromigration damage.
Information
-
Item not Available
- Format:Hardback
- Pages:523 pages, Worked examples or Exercises
- Publisher:Materials Research Society
- Publication Date:24/10/1995
- Category:
- ISBN:9781558992948
Information
-
Item not Available
- Format:Hardback
- Pages:523 pages, Worked examples or Exercises
- Publisher:Materials Research Society
- Publication Date:24/10/1995
- Category:
- ISBN:9781558992948
