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CMOS Gate-Stack Scaling - Materials, Interfaces and Reliability Implications: Volume 1155, Paperback / softback Book

CMOS Gate-Stack Scaling - Materials, Interfaces and Reliability Implications: Volume 1155 Paperback / softback

Edited by Alexander A. (University of Texas, Austin) Demkov, Bill Taylor, H. Rusty (Texas A & M University) Harris, Jeffery W. Butterbaugh, Willy Rachmady

Part of the MRS Proceedings series

Paperback / softback

Description

To address the increasing demands of device scaling, new materials are being introduced into conventional Si CMOS processing at an unprecedented rate.

Presentations collected here focus on understanding, from a chemistry and materials perspective, the mechanism of interface formation and defects at interfaces, for both conventional Si and alternative channel (Ge or III-V) systems.

Several papers address reliability concerns for high-k/metal gate (basic physical models, charge trapping, etc.), while others cover characterization of the thin films and interfaces which comprise the gate stack.

Topics include: advanced Si-based gate stacks; and alternate channel materials.

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