Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion Paperback / softback
Edited by Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni
Part of the Integrated Circuits and Systems series
Paperback / softback
Description
This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology.
The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems.
Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion. Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers;Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency andlower cost power conversion;Enables design of smaller, cheaper and more efficient power supplies.
Information
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Out of stock
- Format:Paperback / softback
- Pages:232 pages, 165 Illustrations, color; 18 Illustrations, black and white; XIII, 232 p. 183 illus., 165
- Publisher:Springer Nature Switzerland AG
- Publication Date:30/01/2019
- Category:
- ISBN:9783030085940
Information
-
Out of stock
- Format:Paperback / softback
- Pages:232 pages, 165 Illustrations, color; 18 Illustrations, black and white; XIII, 232 p. 183 illus., 165
- Publisher:Springer Nature Switzerland AG
- Publication Date:30/01/2019
- Category:
- ISBN:9783030085940
