Physics and Technology of Crystalline Oxide Semiconductor CAAC-IGZO : Application to LSI Hardback
Edited by Shunpei Yamazaki, Masahiro Fujita
Part of the Wiley Series in Display Technology series
This book describes the application of c-axis aligned crystalline In-Ga-Zn oxide (CAAC-IGZO) technology in large-scale integration (LSI) circuits.
The applications include Non-volatile Oxide Semiconductor Random Access Memory (NOSRAM), Dynamic Oxide Semiconductor Random Access Memory (DOSRAM), central processing unit (CPU), field-programmable gate array (FPGA), image sensors, and etc.
The book also covers the device physics (e.g., off-state characteristics) of the CAAC-IGZO field effect transistors (FETs) and process technology for a hybrid structure of CAAC-IGZO and Si FETs.
It explains an extremely low off-state current technology utilized in the LSI circuits, demonstrating reduced power consumption in LSI prototypes fabricated by the hybrid process.
A further two books in the series will describe the fundamentals; and the specific application of CAAC-IGZO to LCD and OLED displays.
Key features: Outlines the physics and characteristics of CAAC-IGZO FETs that contribute to favorable operations of LSI devices.
Explains the application of CAAC-IGZO to LSI devices, highlighting attributes including low off-state current, low power consumption, and excellent charge retention. Describes the NOSRAM, DOSRAM, CPU, FPGA, image sensors, and etc., referring to prototype chips fabricated by a hybrid process of CAAC-IGZO and Si FETs.
- Format: Hardback
- Pages: 376 pages
- Publisher: John Wiley and Sons Ltd
- Publication Date: 23/12/2016
- Category: Electricity, electromagnetism & magnetism
- ISBN: 9781119247340