Graphene and Carbon Nanotube Field Effect Transistors PDF
Edited by Thomas H Caine
Description
This book describes initial efforts, as part of the new Strategic Technology Institute (STI) on carbon electronics, to model and simulate the performance of graphene field-effect transistors (FETs) using macroscopic descriptions that are classical for semiconductor devices.
It is argued that the underlying physics that differentiates these devices from their normal semiconductor-based counterparts is most clearly revealed by non-computer-intensive descriptions that allow the designer to compare their behavior with that of their well-studied semiconductor counterparts. Because it admits a reasonable description of both the lateral and vertical field and transport functionality of the FET structure, the gradual-channel approximation is key to this approach.
Information
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Download - Immediately Available
- Format:PDF
- Pages:125 pages
- Publisher:Nova Science Publishers
- Publication Date:01/04/2017
- Category:
- ISBN:9781536116373
Information
-
Download - Immediately Available
- Format:PDF
- Pages:125 pages
- Publisher:Nova Science Publishers
- Publication Date:01/04/2017
- Category:
- ISBN:9781536116373